2014年诺贝尔物理学奖得主Hiroshi Amano和Isamu Akasaki论著。

摘要：We studied structural and optical properties of Al1~xInxN and Al1~y~zGazInyN Þlms. The Þlms were grown on GaN by atmospheric pressure metalorganic vapor-phase epitaxy. GaN was grown on a c-plane sapphire substrate with a low-temperature-deposited AlN bu¤er layer. Photoluminescence (PL), absorption and X-ray di¤raction measurements of Al1~xInxN showed that PL and absorption spectral peaks shift to lower photon energy with increasing alloy composition x and that Al0.83In0.17N has the highest crystallinity.