High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

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文集编号: 2014101309890

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2014年诺贝尔物理学奖得主Shuji Nakamura论著。

摘要:High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.

文档标签: 电磁学
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